Ion Implantation Laboratory - IF UFRGS: mudanças entre as edições
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*''1. Ion-matter interactions:'' | *''1. Ion-matter interactions:'' | ||
*''2. Physics of semiconductor devices:'' | *''2. Physics of semiconductor devices:'' | ||
*''3. Fotoluminescence of Si and Ge nanocrystals formed by ion implantation in SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> matrices and high temperature annealing.'' | *''3. Fotoluminescence of Si and Ge nanocrystals formed by ion implantation in SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> matrices and high temperature annealing.'' | ||
| Linha 331: | Linha 315: | ||
*''13. Semiconductor nanowires (synthesis, modification, characterization and aplications). '' | *''13. Semiconductor nanowires (synthesis, modification, characterization and aplications). '' | ||
*''14 Formation of metalic standards for the selective growth of semiconductor nanowires using litography technique'' | *''14 Formation of metalic standards for the selective growth of semiconductor nanowires using litography technique'' | ||
= Laboratory Organization Chart = | = Laboratory Organization Chart = | ||
Edição das 15h27min de 26 de fevereiro de 2019
Welcome !
Para a versão em português clique aqui
Announcements
TERMS OF AGREEMENT - EXTERNAL USERS [1]
PUBLICATION RULLES : AFFILIATION and ACKNOWLEDGEMENT [2]
LABORATORY REGULATIONS AND PROCEDURES [3]
The Ion Implantation Laboratory is a multi-user plataform IE-MULTI complying with the PREMIUM - PROPESQ program.
Infrastructure: Ion accelerators, annealing furnaces, mechanical workshop, sample preparation laboratories, seminar room.
Premium Program scholarship working hours
IAEA ACCELERATORS PORTAL - Accelerator Knowledge Portal [4]
See also the National Institute of Surface Engineering blog [ http://bit.ly/MAdmsG]
BIENNIAL REPORT 2015/16 [5]
BIENNIAL REPORT 2013/14 [6]
ANNUAL REPORT 2012' [7]
ANNUAL REPORT 2011 [8]
ANNUAL REPORT 2010 [9]
Pictures from the Ion Implantation Laboratory http://implantador.multiply.com
SCHEDULE (subject to change)
->To access, click on the respective links:
ION IMPLANTER 500 kV
TANDETRON 3 MV
Reservation - Seminar Room
The seminar room of the Ion Implantation Laboratory is for seminars, lectures and meetings. The permanent schedule for the seminar room is shown in the table below.
PERMANENT SCHEDULE (Year/Semester: 2018/02)
| Time | Monday | Tuesday | Wednesday | Thursday | Friday |
| 8:30 - 9:00 | - | - | lecture - Henri Boudinov | - | - |
| 9:00 - 9:30 | - | - | lecture - Henri Boudinov | - | - |
| 9:30 - 10:00 | - | - | lecture - Henri Boudinov | - | - |
| 10:00 - 10:30 | - | - | lecture - Henri Boudinov | - | - |
| 10:30 - 11:00 | - | - | - | - | - |
| 11:00 - 11:30 | - | - | - | - | - |
| 11:30 - 12:00 | - | - | - | - | - |
| 12:00 - 12:30 | - | Group meeting - Raquel | - | - | - |
| 12:30 - 13:00 | - | Group meeting - Raquel | - | - | Group meeting - Cláudio Radtke |
| 13:00 - 13:30 | - | Group meeting - Johnny | - | - | Group meeting - Cláudio Radtke |
| 13:30 - 14:00 | - | Group meeting - Johnny | - | Lecture PG - Daniel | Group meeting - Cláudio Radtke |
| 14:00 - 14:30 | - | Group meeting - Johnny | - | Lecture PG - Daniel | Group meeting - Cláudio Radtke |
| 14:30 - 15:00 | - | Group meeting - Johnny | - | Lecture PG - Daniel | Group meeting - Cláudio Radtke |
| 15:00 - 15:30 | - | Group meeting - MEIS | - | Meeting LII / Seminars | - |
| 15:30 - 16:00 | - | Group meeting - MEIS | - | Meeting LII / Seminars | - |
| 16:00 - 16:30 | Lecture - Fernanda | Group Meeting - Paulo | - | Meeting LII / Seminars | - |
| 16:30 - 17:00 | Lecture - Fernanda | Group meeting - Paulo | - | - | - |
| 17:00 - 17:30 | Lecture - Fernanda | Group meeting - Paulo | Group meeting - Henri Boudinov | - | - |
| 17:30 - 18:30 | - | - | Group meeting - Henri Boudinov | - | - |
| 18:30 - | - | - | - | - | - |
The seminar room can be booked for occasional events whenever free. The occasional reservations already booked are the following:
OCCASIONAL RESERVATION (Year/Semester: 2019/01)
| Day | Time | Contact Person | Comments | |
| 14/02/2019 (Thursday) | 09:00 - 12:00 | Charles Bolzan | Practice |
To book the seminar room, talk to Prof. Leandro (leandro.langie@ufrgs.br ramal 6550).
Pictures
http://implantador.multiply.com
History
The Ion Implantation Laboratory of the Physics Institute - UFRGS was founded in 1980 by Prof. Fernando C. Zawislak and colleagues who until then worked in the areas of perturbed angular correlation and nuclear physics. The activities of the Ion Implantation Laboratory began with the acquisition of the 400 kV accelerator in 1981 (and 1996 extended to 500 kV), with FINEP resources. In 1989 we received a 250 kV ion implanter as a donation from IBM (USA), which is dedicated to applications in microelectronics. Before the end of the 1990s, the Ion Implantation Laboratory was already one of UFRGS 'successful research facilities, not only for qualified scientific production, but also for the training of phd and master students, and for the intense international exchange.
As a result of this success, the Ion Implantation group received new financial support from FINEP, which allowed the acquisition, in January 1995, of a 3MV TANDEM accelerator, installed in a new building, and in operation since December 1996.
With these three accelerators, the Laboratory is able to produce ion beams of virtually all stable isotopes of the periodic table, allowing an action that covers, in addition to research in physics, many areas of materials science. On the other hand, the two machines of higher energy, and especially the Tandem accelerator of 3 MV, are efficient instruments in the analysis of materials, surfaces, interfaces and thin films, using Rutherford Backscattering Spectroscopy (RBS), Channeling, Nuclear Reaction Analysis (NRA), Elastic Recoil Detection Analysis (ERDA), Particle Induced X-Ray Emission (PIXE) and Scattering, all available at the Ion Implantation Laboratory of the Physics Institute of the Federal University of Rio Grande do Sul.
Research Lines
- 1. Ion-matter interactions:
- 2. Physics of semiconductor devices:
- 3. Fotoluminescence of Si and Ge nanocrystals formed by ion implantation in SiO2 and Si3N4 matrices and high temperature annealing.
- 4. Study of formation processes and structure of Sn, Pb and Ge nanocrystals formed by ion implantation in SiO2/Si and SiO2/SiN/Si.
- 5. Investigation of nanoscopic dielectric films to be used as dielectric gates in advanced semiconductor devices.
- 6. Physicochemical characterization of semiconductor nanostructures.
- 7. Elemental composition characterization of food and study of the ionic transport mechanisms in proteins and cells using the PIXE technique.
- 8. Ion irradiation effects in structural properties of amorphous hydrogenated carbon films.
- 9. Chemical compositional analysis and depth distribution profile of several elements in nanolaminate metalic compounds and nanoscopic multilayers.
- 10. Ion implantation of metalic, polymeric and ceramical systems by plasma imersion.
- 11. Nanostructured shieldings.
- 12. Use of ion implantation in optimizing the thermal stability of the microstructure of contacts and interconnections of Al and Cu in microelectronic devices.
- 13. Semiconductor nanowires (synthesis, modification, characterization and aplications).
- 14 Formation of metalic standards for the selective growth of semiconductor nanowires using litography technique
Laboratory Organization Chart
General Coordinator - Prof. Pedro Luis Grande
General Vice-Coordinator - Prof. Paulo. F. P. Fichtner
Accelerators Coordinator - Prof. Johnny F. Dias
Accelerators Vice-Coordenador - Prof. Livio Amaral
Management Committee
Pedro Luis Grande, Johnny F. Dias, Paulo F. P. Fichtner Livio Amaral, Henri Boudinov, Jonder Morais, Fernanda Stedile, Cláudio Radtke
Management Sub-Committee - accelerators
Johnny F. Dias, Agostinho Bulla, Livio Amaral
Users Committee and RAU
José Henrique R. dos Santos, Raquel Giulian, Leandro Araújo
Pessoal
PESQUISADORES
Fernando Claudio Zawislak, Dr. (IF, UFRGS, 1967) - Fundador e Coordenador Geral do Grupo desde 1980 até 2008 [10]
Moni Behar, Dr. (UBA, ARGENTINA, 1970) - Coordenador dos Aceleradores desde 1982 até 2010 [11]
Israel Jacob Rabin Baumvol, Dr. (IF, UFRGS, 1977) [12]
Livio Amaral, Dr. (IF, UFRGS, 1982) [13]
Paulo Fernando Papaleo Fichtner, Dr. (IF, UFRGS, 1987) [14]
Pedro Luís Grande, Dr. (IF, UFRGS, 1989)- Coordenador Geral do Grupo a partir de 2009 Researcher ID[15]
Johnny Ferraz Dias, Dr. (UG, BÉLGICA, 1994)- Coordenador dos Aceleradores a partir de 2010 [16]
Henri Ivanov Boudinov , Dr. (IE-BAN, BULGÁRIA, 1991) [17]
Fernanda Chiarello Stedile, Dr. (IQ, UFRGS, 1994) [18]
Rafael Peretti Pezzi, Dr. (IF, UFRGS, 2009) [19] Caderno de Laboratório
Raul Carlos Fadanelli Filho, Dr. (IF, UFRGS, 2005) [20]
Ricardo Meurer Papaléo, Dr. (U.UPPSALA, SUÉCIA, 1996) - PUC-RS [21]
Rogério Luis Maltez, Dr.(IF, UFRGS, 1997) [22]
Jonder Morais, Dr.(IF, UFRGS, 1999) [23]
Claudio Radtke, Dr. (IF, UFRGS, 2003) [24]]
Cristiano Krug, Dr. (IF, UFRGS, 2003) [25]]
Daniel Lorscheitter Baptista, Dr. (IF, UFRGS, 2003) [26]
Gabriel Viera Soares, Dr. (IF, UFRGS, 2008) [27]
Leandro Langie Araujo, Dr. (IF, UFRGS, 2004) [28]
Raquel Giulian, Dr. (RSPE, ANU, AUSTRÁLIA, 2009) [29]
José Henrique Rodrigues dos Santos, Dr. (IF, UFRGS 1997) [30]
Agenor Hentz da Silva, Dr. (IF,UFRGS, 2008) [31]
PESQUISADORES ASSOCIADOS
Douglas Langie da Silva, Dr. (IF, UFRGS, 2004) - Colaborador, UFPel [32]
Eduardo Ceretta Moreira, Dr (IF, UFRGS, 2000) - Colaborador, UNIPAMPA [33]
Irene Teresinha Santos Garcia, Dr (IF, UFRGS, 2001) - Colaborador, UFPEL [34]
Uilson Schwantz Sias, Dr. (IF, UFRGS, 2006) - Colaborador, CEFET-RS [35]
Felipe Kremer, Dr. (IF, UFRGS, 2010) - Colaborador, ANU, Austrália [36]
Carla Eliete Iochims dos Santos, Dr. (IF, UFRGS, 2011) - Colaborador, USP-SP [37]
PÓS-DOUTORANDOS
Maurício de Albuquerque Sortica [38]
Paulo Fernandes Costa Jobim [39]
Rafael Leal [40]
Wellington Silva Fernandez [41]
RESPONSÁVEL TÉCNICO PELOS ACELERADORES
Agostinho A. Bulla, Eng. Elétrico [42]
TÉCNICOS
Clodomiro F. Castello, técnico operador dos aceleradores[43]
Paulo R. Borba, técnico operador dos aceleradores [44]
Paulo Kovalick, técnico mecânico, responsável pela oficina mecânica [45]
BOLSISTAS PREMIUM
Eduardo Ribeiro dos Santos [46]
Marcelo Cavagnolli [47]
ALUNOS DE DOUTORADO
Anaí Duarte [48]
Augusto Alexandre Durgante de Mattos [49]
Chiara das Dores do Nascimento [50]
Cláudia Telles de Souza [51]
Cristiane Marin [52]
Deise Schafer [53]
Elis Moura Stori [54]
Gabriel Marmitt [55]
Josiane Bueno Salazar [56]
Liana Appel Boufleur [57]
Lúcio Flávio dos Santos Rosa [58]
Masahiro Hatori [59]
Rafael Cardim Pazim [mailto:]
Roberto Moreno Souza dos Reis [60]
Tiago Silva de Ávila [61]
Zacarias Eduardo Fabrim [62]
Eduardo Pitthan Filho [63]
ALUNOS DE MESTRADO
Eliasibe Luis de Souza [64]
João Wagner Oliveira [65]
Luiza Raquel Manfredi da Silva [66]
ALUNOS DE INICIAÇÃO CIENTÍFICA
Deiverti de Vila Bauer [67]
Felipe Dalponte Bregalda [68]
Guilherme Domingues Kolinger [69]
Jady Souza Feijó [70]
Júlio César Ferreira Tâmbara [71]
Lais Gomes de Almeida [72]
Mateus Vicente Wrasse Wiebusch Müller [73]
Mariana de Mello Timm [74]
Vanessa Sobrosa Souza [75]
Viviane Peçanha Antonio [76]
Lucas Hansen [77]
Gustavo Henrique Stedile Dartora [78]
Infra-estrutura
 Acelerador Tandetron 3MV |
 Acelerador 500 kV |
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 Reatores e Fornos |
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 Oficina Mecânica |
Técnicas
TÉCNICAS DE ANÁLISE POR FEIXE DE ÍONS
- Espectrometria de Retroespalhamento Rutherford (RBS) e Canalização
- Análise por Reações Nucleares (NRA)
- Análise por Detecção de Recuo Elástico (ERDA)
- Emissão de Raios-X Induzida por Partículas (PIXE)
- Espalhamento de Íons de Energia Média (MEIS)
IMPLANTAÇÃO E IRRADIAÇÃO IÔNICA
Laboratórios Associados
- Laboratório de Microeletrônica
- Laboratório de Físico-Química de Superfícies e Interfaces Sólidas
- Laboratório de Espectroscopia de Elétrons
Links
Contato
Laboratório de Implantação Iônica Instituto de Física Universidade Federal do Rio Grande do Sul – UFRGS
Av. Bento Gonçalves, 9500 91501-970 Porto Alegre, RS Brasil Fone: +55-51 3308-7004 Fax: +55-51 3308-7286
